SISH112DN-T1-GE3 Vishay Siliconix Transistors - FETs MOSFETs - Single

Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Product Number: SISH112