TPH4R606NH,L1Q Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVIII-H
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 30 V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Base Product Number: TPH4R606