R8010ANX Rohm Semiconductor Transistors - FETs MOSFETs - Single

Mfr: Rohm Semiconductor
Series: -
Package: Bulk
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 560mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack
Base Product Number: R8010