TK17E65W,S1X Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: DTMOSIV
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Product Number: TK17E65