PMCM4401VPEZ NXP Semiconductors Transistors - FETs MOSFETs - Single

Mfr: NXP Semiconductors
Series: -
Package: Bulk
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
FET Feature: -
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-WLCSP (0.78x0.78)
Package / Case: 4-XFBGA, WLCSP