Mfr: Infineon Technologies
Series: *
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -40°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-5-2
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
