Mfr: International Rectifier
Series: HEXFET®
Package: Bulk
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
