IRF7769L2TRPBF International Rectifier Transistors - FETs MOSFETs - Single

Mfr: International Rectifier
Series: HEXFET®
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET??Isometric L8