TK2Q60D(Q) Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: ?-MOSVII
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: PW-MOLD2
Package / Case: TO-251-3 Stub Leads, IPak
Base Product Number: TK2Q60