AUIRF1010ZL Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: HEXFET®
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA