IPL65R650C6SATMA1 Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: CoolMOS??C6
Package: Tape & Reel (TR)
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
FET Feature: -
Power Dissipation (Max): 56.8W (Tc)
Operating Temperature: -40°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-2
Package / Case: 8-PowerTDFN
Base Product Number: IPL65R650