SIHF640S-GE3 Vishay Siliconix Transistors - FETs MOSFETs - Single

Mfr: Vishay Siliconix
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: SIHF640