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SUD35N10-26P-T4GE3 Vishay Siliconix Transistors - FETs MOSFETs - Single

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Description of your requirements:

Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
FET Feature: -
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number: SUD35

Datasheet

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