IRF350 NTE Electronics, Inc Transistors - FETs MOSFETs - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AA, TO-3