P3M12017K4 PN Junction Semiconductor Transistors - FETs MOSFETs - Single

Mfr: PN Junction Semiconductor
Series: P3M
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 151A
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ)
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 789W
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4