IV1Q12050T4 Inventchip Transistors - FETs MOSFETs - Single

Mfr: Inventchip
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
Vgs (Max): +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 344W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package / Case: TO-247-4