Mfr: PN Junction Semiconductor
Series: -
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A
Drive Voltage (Max Rds On, Min Rds On): 6V
Rds On (Max) @ Id, Vgs: -
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 55.5W
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN8*8
