P3M06300K3 PN Junction Semiconductor Transistors - FETs MOSFETs - Single

Mfr: PN Junction Semiconductor
Series: P3M
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 9A
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 500mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 904 nC @ 15 V
Vgs (Max): +20V, -8V
Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 38W
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3L
Package / Case: TO-247-3