2N6847 International Rectifier Transistors - FETs MOSFETs - Single

Mfr: International Rectifier
Series: HEXFET®
Package: Bulk
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.725Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AF Metal Can