NVH4L045N065SC1 onsemi Transistors - FETs MOSFETs - Single

Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Vgs (Max): +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
FET Feature: -
Power Dissipation (Max): 187W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4