IXTT10N100D2 IXYS Transistors - FETs MOSFETs - Single

Mfr: IXYS
Series: Depletion
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
FET Feature: Depletion Mode
Power Dissipation (Max): 695W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268AA
Package / Case: TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Base Product Number: IXTT10