Mfr: Infineon Technologies
Series: HEXFET®
Package: Tube
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
