Mfr: Infineon Technologies
Series: HEXFET®
Package: Bulk
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
