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RS1E300GNTB Rohm Semiconductor Transistors - FETs MOSFETs - Single

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Description of your requirements:

Mfr: Rohm Semiconductor
Series: -
Package: Tape & Reel (TR)
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 39.8 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 33W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSOP
Package / Case: 8-PowerTDFN
Base Product Number: RS1E

Datasheet

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