MSCSM120HM31CT3AG Microchip Technology Transistors - FETs MOSFETs - Arrays

Mfr: Microchip Technology
Series: -
Package: Tube
Product Status: Active
FET Type: 4 N-Channel
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C~175°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F
Base Product Number: MSCSM120