Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR)
Product Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6
Base Product Number: SSM6N39
