GE17042CCA3 GE Aerospace Transistors - FETs MOSFETs - Arrays

Mfr: GE Aerospace
Series: -
Package: Bulk
Product Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 18V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Power - Max: 1250W
Operating Temperature: 175°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -