Mfr: Harris Corporation
Series: -
Package: Bulk
Product Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154\ 3.90mm Width)
Supplier Device Package: 8-SOIC
