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MSCSM120TAM11CTPAG Microchip Technology Transistors - FETs MOSFETs - Arrays

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Description of your requirements:

Mfr: Microchip Technology
Series: -
Package: Tube
Product Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Power - Max: 1.042kW (Tc)
Operating Temperature: -40°C~175°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6-P
Base Product Number: MSCSM120

Datasheet

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