PAA12400BM3 PN Junction Semiconductor Transistors - FETs MOSFETs - Arrays

Mfr: PN Junction Semiconductor
Series: -
Package: Tray
Product Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id: 5V @ 100mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
Power - Max: -
Operating Temperature: -40°C~175°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module