GE12047BCA3 GE Aerospace Transistors - FETs MOSFETs - Arrays

Mfr: GE Aerospace
Series: SiC Power
Package: Box
Product Status: Active
FET Type: 2 Independent
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 475A
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 29300pF @ 600V
Power - Max: 1250W
Operating Temperature: -55°C~150°C(Tc)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -