SSM6N815R,LF Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Arrays

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVIII-H
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.8W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F
Base Product Number: SSM6N815