HAT2218R-EL-E Renesas Electronics America Inc Transistors - FETs MOSFETs - Arrays

Mfr: Renesas Electronics America Inc
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 8A
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154\ 3.90mm Width)
Supplier Device Package: 8-SOP