GE12160CEA3 GE Aerospace Transistors - FETs MOSFETs - Arrays

Mfr: GE Aerospace
Series: SiC Power
Package: Bulk
Product Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 1.425kA (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 475A, 20V
Vgs(th) (Max) @ Id: 4.5V @ 480mA
Gate Charge (Qg) (Max) @ Vgs: 3744nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 90000pF @ 600V
Power - Max: 3.75kW (Tc)
Operating Temperature: -55°C~150°C(Tc)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -