BSM300D12P3E005 Rohm Semiconductor Transistors - FETs MOSFETs - Arrays

Mfr: Rohm Semiconductor
Series: -
Package: Bulk
Product Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
Power - Max: 1260W (Tc)
Operating Temperature: -40°C~150°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Base Product Number: BSM300