RN1101MFV,L3F Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single Pre-Biased

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Not For New Designs
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM
Base Product Number: RN1101