PDTA113EMB,315 NXP USA Inc. Transistors - Bipolar (BJT) - Single Pre-Biased

Mfr: NXP USA Inc.
Series: -
Package: Bulk
Product Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006B-3