MJD112-1G onsemi Transistors - Bipolar (BJT) - Single

Mfr: onsemi
Series: -
Package: Tube
Product Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1.75 W
Frequency - Transition: 25MHz
Operating Temperature: -65°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Base Product Number: MJD112