2SA1987-O(Q) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Bulk
Product Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 180 W
Frequency - Transition: 30MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)
Base Product Number: 2SA1987