NTE2320 NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 30mA, 300mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 1.25 W
Frequency - Transition: 350MHz
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300\ 7.62mm)
Supplier Device Package: 14-DIP