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NTE16001 NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

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Description of your requirements:

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Power - Max: 600 mW
Frequency - Transition: 500MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: 3-SIP

Datasheet

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