NTE58 NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 4V
Power - Max: 200 W
Frequency - Transition: 20MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: 3-SIP