NTE81 NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 30mA, 300mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Power - Max: 625 mW
Frequency - Transition: 250MHz
Operating Temperature: -65°C~200°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-99-6 Metal Can
Supplier Device Package: TO-99