PBSS4130QAZ NXP Semiconductors Transistors - Bipolar (BJT) - Single

Mfr: NXP Semiconductors
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Power - Max: 325 mW
Frequency - Transition: 190MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3