BDP954H6327XTSA1 Infineon Technologies Transistors - Bipolar (BJT) - Single

Mfr: Infineon Technologies
Series: -
Package: Bulk
Product Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5 W
Frequency - Transition: 100MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4