PBSS4220V,115 NXP USA Inc. Transistors - Bipolar (BJT) - Single

Mfr: NXP USA Inc.
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Power - Max: 900 mW
Frequency - Transition: 210MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666