NTE199 NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Box
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 30nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 5V
Power - Max: 360 mW
Frequency - Transition: -
Operating Temperature: -55°C~125°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92