2SD1223(TE16L1,NQ) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Single

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR)
Product Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD
Base Product Number: 2SD1223