NTE126A NTE Electronics, Inc Transistors - Bipolar (BJT) - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 11.5 V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 1V
Power - Max: 150 mW
Frequency - Transition: 300MHz
Operating Temperature: -65°C~100°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18