PHE13009/DG,127 NXP USA Inc. Transistors - Bipolar (BJT) - Single

Mfr: NXP USA Inc.
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Power - Max: 80 W
Frequency - Transition: -
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB